The present invention is directed to a spin-orbitronics device including a magnetic comparison layer structure having a pseudo-invariable magnetization direction; a magnetic free layer structure whose variable magnetization direction can be switched by a switching current passing between the magnetic comparison layer structure and the magnetic free layer structure; an insulating tunnel junction layer interposed between the magnetic comparison layer structure and the magnetic free layer structure; and a non-magnetic transverse polarizing layer formed adjacent to the magnetic comparison layer structure. The pseudo-invariable magnetization direction of the magnetic comparison layer structure may be switched by passing a comparison current through the transverse polarizing layer along a direction that is substantially parallel to a layer plane of the transverse polarizing layer. The pseudo-invariable magnetization direction of the magnetic comparison layer structure is not switched by the switching current. The variable magnetization direction of the magnetic free layer structure is not switched by the comparison current.