Invention Grant
- Patent Title: Recessed ohmic contacts in a III-N device
- Patent Title (中): III-N器件中的嵌入式欧姆接触器
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Application No.: US14572670Application Date: 2014-12-16
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Publication No.: US09536967B2Publication Date: 2017-01-03
- Inventor: Toshihide Kikkawa , Kenji Kiuchi , Tsutomu Hosoda , Masahito Kanamura , Akitoshi Mochizuki
- Applicant: Transphorm Inc.
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/417 ; H01L21/3065 ; H01L21/308 ; H01L21/324 ; H01L29/66 ; H01L29/778 ; H01L21/285 ; H01L29/20
Abstract:
A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.
Public/Granted literature
- US20160172455A1 RECESSED OHMIC CONTACTS IN A III-N DEVICE Public/Granted day:2016-06-16
Information query
IPC分类:
