Invention Grant
- Patent Title: Electronic device and method for fabricating the same
- Patent Title (中): 电子器件及其制造方法
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Application No.: US14321719Application Date: 2014-07-01
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Publication No.: US09412430B2Publication Date: 2016-08-09
- Inventor: Hyo-Jin Kim
- Applicant: SK HYNIX INC.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0006105 20140117
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C14/00 ; G11C11/22 ; H01L27/24 ; G11C13/00 ; H01L27/22 ; G11C11/16
Abstract:
An electronic device including a semiconductor memory is provided. The semiconductor memory includes a first electrode, a second electrode crossing the first electrode, and a variable resistance pattern positioned in an intersection region of the first electrode and the second electrode and buried in the first electrode.
Public/Granted literature
- US20150206585A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-07-23
Information query
IPC分类:
