Invention Grant
- Patent Title: Polysilicon resistor structure having modified oxide layer
- Patent Title (中): 具有改性氧化物层的多晶硅电阻器结构
-
Application No.: US14057084Application Date: 2013-10-18
-
Publication No.: US09385087B2Publication Date: 2016-07-05
- Inventor: Debarsi Chakraborty , Aveek N. Chatterjee
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Michael LeStrange
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L49/02 ; H01L23/522
Abstract:
Various embodiments include resistor structures. Particular embodiments include a resistor structure having multiple oxide layers, at least one of which includes a modified oxide. The modified oxide can aid in controlling the thermal capacitance and the thermal time constant of the resistor structure, or the thermal dissipation within the resistor structure.
Public/Granted literature
- US20150108608A1 POLYSILICON RESISTOR STRUCTURE HAVING MODIFIED OXIDE LAYER Public/Granted day:2015-04-23
Information query
IPC分类:
