Invention Grant
- Patent Title: Light-emitting device and the manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13918374Application Date: 2013-06-14
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Publication No.: US09362452B2Publication Date: 2016-06-07
- Inventor: Shih Pang Chang , Ta Cheng Hsu , Min Hsun Hsieh
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/00
Abstract:
A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.
Public/Granted literature
- US20140367692A1 LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2014-12-18
Information query
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