Invention Grant
US09331093B2 Three dimensional NAND device with silicon germanium heterostructure channel
有权
具有硅锗异质结构通道的三维NAND器件
- Patent Title: Three dimensional NAND device with silicon germanium heterostructure channel
- Patent Title (中): 具有硅锗异质结构通道的三维NAND器件
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Application No.: US14505870Application Date: 2014-10-03
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Publication No.: US09331093B2Publication Date: 2016-05-03
- Inventor: Peter Rabkin , Jayavel Pachamuthu
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/165 ; H01L29/167 ; H01L29/04 ; H01L21/28 ; H01L21/02 ; H01L29/10 ; H01L29/78 ; H01L29/66
Abstract:
A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, forming an at least one opening in the stack, forming at least a portion of a memory film in the at least one opening and forming a first portion of a semiconductor channel followed by forming a second portion of the semiconductor channel in the at least one opening. The second portion of the semiconductor channel comprises silicon and germanium and contains more germanium than a first portion of the semiconductor channel which is located closer to the memory film than the second portion.
Public/Granted literature
- US20160099250A1 THREE DIMENSIONAL NAND DEVICE WITH SILICON GERMANIUM HETEROSTRUCTURE CHANNEL Public/Granted day:2016-04-07
Information query
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