Invention Grant
- Patent Title: Semiconductor device with trench-like feed-throughs
- Patent Title (中): 具有沟槽状馈通的半导体器件
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Application No.: US12610148Application Date: 2009-10-30
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Publication No.: US09306056B2Publication Date: 2016-04-05
- Inventor: Deva Pattanayak , King Owyang , Mohammed Kasem , Kyle Terrill , Reuven Katraro , Kuo-In Chen , Calvin Choi , Qufei Chen , Ronald Wong , Kam Hong Lui , Robert Xu
- Applicant: Deva Pattanayak , King Owyang , Mohammed Kasem , Kyle Terrill , Reuven Katraro , Kuo-In Chen , Calvin Choi , Qufei Chen , Ronald Wong , Kam Hong Lui , Robert Xu
- Applicant Address: US CA Santa Clara
- Assignee: Vishay-Siliconix
- Current Assignee: Vishay-Siliconix
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/78 ; H01L23/00 ; H01L29/417 ; H01L29/66 ; H01L29/45
Abstract:
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
Public/Granted literature
- US20110101525A1 SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS Public/Granted day:2011-05-05
Information query
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