Invention Grant
US09276583B1 Soft dark bit masking with integrated load modulation and burn-in induced destabilization for physically unclonable function keys
有权
具有集成负载调制功能的软暗位屏蔽，并为物理不可克隆功能键老化引起不稳定
- Patent Title: Soft dark bit masking with integrated load modulation and burn-in induced destabilization for physically unclonable function keys
- Patent Title (中): 具有集成负载调制功能的软暗位屏蔽，并为物理不可克隆功能键老化引起不稳定
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Application No.: US14748591Application Date: 2015-06-24
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Publication No.: US09276583B1Publication Date: 2016-03-01
- Inventor: Sudhir K Satpathy , Sanu K Mathew
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Thomas R. Lane
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K19/177 ; G06F11/07
Abstract:
Embodiments of an invention for soft dark bit masking are disclosed. In one embodiment, an apparatus includes a basic physically unclonable function (PUF) cell, a load, and a masking circuit. The load is selectively connectable to the basic PUF cell to determine whether the basic PUF cell is unstable. The masking circuit is to mask the output of the basic PUF cell if the basic PUF cell is determined to be unstable. Embodiments of the invention also include mechanisms to reinforce the stability of stable cells, while further destabilizing unstable cells.
Information query
