Invention Grant
- Patent Title: Methods of manufacturing a phase change memory device
- Patent Title (中): 制造相变存储器件的方法
-
Application No.: US13904665Application Date: 2013-05-29
-
Publication No.: US09054306B2Publication Date: 2015-06-09
- Inventor: Seong-Ho Eun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0071592 20120702
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00 ; H01L27/24
Abstract:
A method of manufacturing a phase change memory device includes forming a lower electrode in a cell region of a substrate and a transistor in a peripheral circuit region of the substrate. A first insulating interlayer is formed on the substrate and covers the lower electrode and the transistor. A first contact is formed to penetrate through the first insulating interlayer to connect with the transistor. A second insulating interlayer is formed on the first insulating interlayer and the first contact. A first opening and a second opening are formed by partially removing the first and second insulating interlayers. A phase change material layer pattern is formed to partially fill the first opening. A bit line is formed to fill a remaining portion of the first opening, and a wiring is formed to fill the second opening. Accordingly, the manufacturing process may be simplified.
Public/Granted literature
- US20140004680A1 METHODS OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE Public/Granted day:2014-01-02
Information query
IPC分类:
