Invention Grant
- Patent Title: Semiconductor structure including guard ring
- Patent Title (中): 半导体结构包括保护环
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Application No.: US13625889Application Date: 2012-09-25
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Publication No.: US09048019B2Publication Date: 2015-06-02
- Inventor: Martin Kerber , Matthias Stecher
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01F27/28 ; H01L23/522 ; H01L23/58 ; H01L23/00
Abstract:
One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.
Public/Granted literature
- US20130075861A1 Semiconductor structure including guard ring Public/Granted day:2013-03-28
Information query
IPC分类:
