Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
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Application No.: US13967406Application Date: 2013-08-15
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Publication No.: US08665019B2Publication Date: 2014-03-04
- Inventor: Po-Chih Wang
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW99122247A 20100706
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
A power amplifier is provided. The power amplifier includes a loading circuit, a first stage amplifying circuit, an analog pre-distorter, a loading circuit and a second stage amplifying circuit. The first stage amplifying circuit is coupled to the loading circuit to receive a first signal and output a second signal accordingly. The analog pre-distorter is coupled to the first stage amplifying circuit to detect the envelope of the second signal and generates a third signal according to the envelope. The second stage amplifying circuit is coupled to the first stage amplifying circuit to receive the second signal. The loading circuit is biased on the third signal. The gain of the first stage amplifying circuit is related to the third signal.
Public/Granted literature
- US20130328630A1 POWER AMPLIFIER Public/Granted day:2013-12-12
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