Invention Grant
US08644055B2 Nonvolatile memory with enhanced efficiency to address asymetric NVM cells
有权
非易失性存储器，提高了解决不对称NVM单元的效率
- Patent Title: Nonvolatile memory with enhanced efficiency to address asymetric NVM cells
- Patent Title (中): 非易失性存储器，提高了解决不对称NVM单元的效率
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Application No.: US12963820Application Date: 2010-12-09
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Publication No.: US08644055B2Publication Date: 2014-02-04
- Inventor: Alexandre Ney
- Applicant: Alexandre Ney
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: SpryIP, LLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
This application describes embodiments of MRAM cells that utilize a PMOS transistor as an access transistor. The MRAM cells are configured to mitigate the effects of applying asymmetric current loads to transition a Magnetic-Tunnel Junction of the MRAM cell between magnetoresistive states.
Public/Granted literature
- US20120147663A1 NONVOLATILE MEMORY WITH ENHANCED EFFICIENCY TO ADDRESS ASYMETRIC NVM CELLS Public/Granted day:2012-06-14
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