Invention Grant
- Patent Title: Semiconductor temperature sensor using bandgap generator circuit
- Patent Title (中): 半导体温度传感器采用带隙发生器电路
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Application No.: US13175209Application Date: 2011-07-01
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Publication No.: US08405447B2Publication Date: 2013-03-26
- Inventor: David Zimlich
- Applicant: David Zimlich
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L35/00
- IPC: H01L35/00

Abstract:
A combined bandgap generator and temperature sensor for an integrated circuit is disclosed. Embodiments of the invention recognize that bandgap generators typically contain at least one temperature-sensitive element for the purpose of cancelling temperature sensitivity out of the reference voltage the bandgap generator produces. Accordingly, this same temperature-sensitive element is used in accordance with the invention as the means for indicating the temperature of the integrated circuit, without the need to fabricate a temperature sensor separate and apart from the bandgap generator. Specifically, in one embodiment, a voltage across a temperature-sensitive junction from a bandgap generator is assessed in a temperature conversion stage portion of the combined bandgap generator and temperature sensor circuit. Assessment of this voltage can be used to produce a voltage- or current-based output indicative of the temperature of the integrated circuit, which output can be binary or analog in nature.
Public/Granted literature
- US20110260778A1 Semiconductor Temperature Sensor Using Bandgap Generator Circuit Public/Granted day:2011-10-27
Information query
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