Invention Grant
- Patent Title: Compare logic based sequential circuit with ferroelectric or paraelectric material
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Application No.: US17408000Application Date: 2021-08-20
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Publication No.: US11545979B1Publication Date: 2023-01-03
- Inventor: Amrita Mathuriya , Ikenna Odinaka , Rajeev Kumar Dokania , Rafael Rios , Sasikanth Manipatruni
- Applicant: Kepler Computing Inc.
- Applicant Address: US CA San Francisco
- Assignee: Kepler Computing Inc.
- Current Assignee: Kepler Computing Inc.
- Current Assignee Address: US CA San Francisco
- Agency: Mughal IP P.C.
- Main IPC: H03K19/23
- IPC: H03K19/23 ; H03K19/185 ; H03K19/21 ; H03K19/17736 ; H01L49/02 ; G11C7/10

Abstract:
A low power sequential circuit (e.g., latch) uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. In one example, a sequential circuit includes pass-gates and inverters, but without a feedback mechanism or memory element. In another example, a sequential uses load capacitors (e.g., capacitors coupled to a storage node and a reference supply). The load capacitors are implemented using ferroelectric material, paraelectric material, or linear dielectric. In one example, a sequential uses minority, majority, or threshold gates with ferroelectric or paraelectric capacitors. In one example, a sequential circuit uses minority, majority, or threshold gates configured as NAND gates.
Information query
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