Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16847251Application Date: 2020-04-13
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Publication No.: US11444096B2Publication Date: 2022-09-13
- Inventor: Jin Ha Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0146502 20191115
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11548 ; H01L27/11575 ; H01L27/11573 ; H01L27/11556 ; H01L27/11526 ; H01L23/528
Abstract:
A semiconductor device includes a cell array including a source structure, a peripheral circuit, an interconnection structure located between the cell array and the peripheral circuit and electrically coupled to the peripheral circuit, and a decoupling structure configured to prevent a coupling capacitor that occurs between the cell array and the interconnection structure.
Public/Granted literature
- US20210151456A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2021-05-20
Information query
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