The production process according to the invention consists of a nanometric scale transformation of the crystalline silicon in a hybrid arrangement buried within the crystal lattice of a silicon wafer, to improve the efficiency of the conversion of light into electricity, by means of hot electrons. All the parameters, procedures and steps involved in manufacturing giant photoconversion cells have been tested and validated separately, by producing twenty series of test devices.
An example of the technology consists of manufacturing a conventional crystalline silicon photovoltaic cell with a single collection junction and completing the device thus obtained by an amorphizing ion implantation followed by a post-implantation thermal treatment.
The modulation of the crystal, specific to the giant photoconversion, is then carried out on a nanometric scale in a controlled manner to obtain SEGTONs and SEG-MATTER which are active both optically and electronically, together with the primary conversion of the host converter.