Invention Grant
- Patent Title: Dry etching gas composition and dry etching method
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Application No.: US16489756Application Date: 2018-04-02
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Publication No.: US11437244B2Publication Date: 2022-09-06
- Inventor: Korehito Kato , Yoshihiko Iketani , Yukinobu Shibusawa , Hisashi Shimizu
- Applicant: KANTO DENKA KOGYO CO.,LTD.
- Applicant Address: JP Tokyo
- Assignee: KANTO DENKA KOGYO CO.,LTD.
- Current Assignee: KANTO DENKA KOGYO CO.,LTD.
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye
- Priority: JPJP2017-076019 20170406
- International Application: PCT/JP2018/014161 WO 20180402
- International Announcement: WO2018/186364 WO 20181011
- Main IPC: C09K13/08
- IPC: C09K13/08 ; H01L21/3065
Abstract:
A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1): CxHyFz (where x, y, and z are integers that satisfy 2≤x≤4, y+z≤2x+2, and 0.5
Public/Granted literature
- US20200234962A1 DRY ETCHING GAS COMPOSITION AND DRY ETCHING METHOD Public/Granted day:2020-07-23
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