Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
-
Application No.: US16665408Application Date: 2019-10-28
-
Publication No.: US11270962B2Publication Date: 2022-03-08
- Inventor: Chiang-Lin Shih , Pei-Jhen Wu , Ching-Hung Chang , Hsih-Yang Chiu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L21/768

Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor component, a re-routing layer, a bonding dielectric and an insulating layer. The re-routing layer is disposed over the semiconductor component and electrically coupled to the semiconductor component. The bonding dielectric is disposed over the semiconductor component to surround a top portion of the re-routing layer. The insulating layer is disposed between the semiconductor component and the bonding dielectric to surround a bottom portion of the re-routing layer.
Public/Granted literature
- US20210125947A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-04-29
Information query
IPC分类: