Invention Grant
- Patent Title: Differential sensing device with wide sensing margin
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Application No.: US17105435Application Date: 2020-11-25
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Publication No.: US11217281B2Publication Date: 2022-01-04
- Inventor: Cheng-Te Yang , Cheng-Heng Chung
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/08 ; G11C11/16 ; G11C13/00 ; G11C16/04 ; G11C16/10 ; G11C16/14 ; G11C16/26

Abstract:
A differential sensing device includes two reference cells, four path selectors, and four sample circuits. The first path selector is coupled to a first sensing node, the second reference cell, and a first memory cell. The second path selector is coupled to a second sensing node, the first reference cell, and the first memory cell. The third path selector is coupled to a third sensing node, the first reference cell, and a second memory cell. The fourth path selector is coupled to a fourth sensing node, the second reference cell, and the second memory cell. During a sample operation, the first sample circuit samples a first cell current, the second sample circuit samples the first reference current, the third sample circuit samples a second cell current, and the fourth sample circuit samples the second reference current.
Public/Granted literature
- US20210287742A1 DIFFERENTIAL SENSING DEVICE WITH WIDE SENSING MARGIN Public/Granted day:2021-09-16
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