Dielectric super-junction transistors use combinations high dielectric relative permittivity materials and high-mobility materials. An associated electronic device includes a junction portion of a barrier layer adjacent a gate contact and a drain contact. A layered semiconductor device is configured with a junction dielectric permittivity that is greater than a channel dielectric permittivity in the channel layer. The junction portion has a dielectric structure that polarizes carriers within the junction portion such that excess charge on the gate is compensated by an opposite charge in the junction portion of the barrier layer proximate the gate. A sheet charge in the barrier layer is increased to form a depletion region with the channel layer that avoids a conductive parallel channel in the barrier layer to the drain contact.