Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16694470Application Date: 2019-11-25
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Publication No.: US10943861B2Publication Date: 2021-03-09
- Inventor: Kota Ise , Koshun Saito
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2018-224872 20181130
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/498 ; H01L23/31 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.
Public/Granted literature
- US20200176371A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-06-04
Information query
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