An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures are formed through the alternating stack. Each of the memory stack structures includes a memory film and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers and the memory stack structures. Electrically conductive layers are formed in the backside recesses. Each of the electrically conductive layers includes a molybdenum-containing conductive liner and a metal fill portion including a metal other than molybdenum.