Invention Grant
- Patent Title: Systems and methods of dislocation filtering for layer transfer
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Application No.: US16348125Application Date: 2017-11-08
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Publication No.: US10903073B2Publication Date: 2021-01-26
- Inventor: Jeehwan Kim , Kyusang Lee
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2017/060568 WO 20171108
- International Announcement: WO2018/089444 WO 20180517
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/02 ; H01L21/683 ; H01L21/762
Abstract:
A method of manufacturing a semiconductor device includes forming a first epitaxial layer on a first substrate. The first substrate includes a first semiconductor material having a first lattice constant and the first epitaxial layer includes a second semiconductor material having a second lattice constant different from the first lattice constant. The method also includes disposing a graphene layer on the first epitaxial layer and forming a second epitaxial layer comprising the second semiconductor material on the graphene layer. This method can increase the substrate reusability, increase the release rate of functional layers, and realize precise control of release thickness.
Public/Granted literature
- US20190259608A1 SYSTEMS AND METHODS OF DISLOCATION FILTERING FOR LAYER TRANSFER Public/Granted day:2019-08-22
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