Invention Grant
- Patent Title: Amplifier circuit with low malfunction rate
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Application No.: US16242011Application Date: 2019-01-08
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Publication No.: US10771017B2Publication Date: 2020-09-08
- Inventor: Shao-Ming Sun
- Applicant: Elite Semiconductor Memory Technology Inc.
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu
- Main IPC: H03F1/26
- IPC: H03F1/26 ; H03F3/217 ; H03F3/45

Abstract:
An amplifier circuit with novel design is provided. The amplifier circuit includes an input stage, a resistor, an output stage, an intermediate stage and a gm circuit. The input stage is coupled to a first supply voltage, and is arranged to receive an input voltage and a feedback current. The resistor is coupled between the input voltage and the input stage. The output stage is coupled to a second supply voltage, and is arranged to provide an output voltage for driving a load. The intermediate stage is coupled between the input stage and the output stage, and includes a level shifter. The gm circuit is coupled to the input stage, and is arranged to compare the input voltage with a common mode voltage, and thereby generates a compensate current for the input stage.
Public/Granted literature
- US20200220501A1 AMPLIFIER CIRCUIT WITH LOW MALFUNCTION RATE Public/Granted day:2020-07-09
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