Invention Grant
- Patent Title: Method of manufacturing solid-state image sensor
-
Application No.: US16440054Application Date: 2019-06-13
-
Publication No.: US10707263B2Publication Date: 2020-07-07
- Inventor: Hiroyuki Kawano , Tomoaki Arakawa
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai, Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai, Osaka
- Agency: ScienBiziP, P.C.
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G03F7/32 ; G03F7/16 ; G03F7/20 ; G03F7/38
Abstract:
The thickness of an embedding film in a pixel region is adjusted without adding a step.A method of manufacturing a solid-state image sensor (100) according to an embodiment of the present invention includes a development step of removing a photosensitive material (M) in a peripheral circuit region (30) and reducing and adjusting the thickness of the photosensitive material (M) that is in a pixel region (20) and on a multilayered wiring layer (5) to a desired film thickness.
Public/Granted literature
- US20190386058A1 METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR Public/Granted day:2019-12-19
Information query
IPC分类:
