Invention Grant
- Patent Title: Three-dimensional magnetic memory devices
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Application No.: US15857574Application Date: 2017-12-28
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Publication No.: US10541268B2Publication Date: 2020-01-21
- Inventor: Marcin Gajek , Michail Tzoufras , Davide Guarisco , Eric Michael Ryan
- Applicant: SPIN MEMORY, INC.
- Applicant Address: US DE Wilmington
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US DE Wilmington
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/12 ; G11C11/56 ; G11C11/16 ; H01L43/14 ; H01L43/06
Abstract:
A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.
Public/Granted literature
- US20190206931A1 Three-Dimensional Magnetic Memory Devices Public/Granted day:2019-07-04
Information query
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