Invention Grant
- Patent Title: Power device with integrated gate driver
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Application No.: US16097808Application Date: 2017-05-03
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Publication No.: US10404251B2Publication Date: 2019-09-03
- Inventor: Jing Chen , Gaofei Tang
- Applicant: The Hong Kong University of Science and Technology
- Applicant Address: HK Kowloon
- Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: HK Kowloon
- Agency: Amin, Turocy & Watson, LLP
- International Application: PCT/CN2017/082833 WO 20170503
- International Announcement: WO2017/190652 WO 20171109
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/0412 ; H02M1/08 ; H03K17/06

Abstract:
The technology described herein is generally directed towards a self-bootstrap integrated gate driver circuit with high driving speed, enhanced driving capability and rail-to-rail output. A capacitor and diode are used with a first inverter coupled to a control signal input terminal, a second inverter coupled to the first inverter, a push-pull circuit comprising a pull-up transistor and a pull-down transistor and a power device comprising a power device transistor with a gate. Control signal input at one state controls the first inverter to a first output state, turns on the pull-down transistor to discharge the gate of the power device transistor, turns off the power device and charges the capacitor through the diode. The control signal input in another state controls the first inverter to a second output state, turns off the pull-down transistor and turns on the pull-up transistor via the capacitor to turn on the power device.
Public/Granted literature
- US20190140637A1 POWER DEVICE WITH INTEGRATED GATE DRIVER Public/Granted day:2019-05-09
Information query
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