Invention Grant
- Patent Title: Method for manufacturing a light emitting diode chip
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Application No.: US15822227Application Date: 2017-11-27
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Publication No.: US10205048B1Publication Date: 2019-02-12
- Inventor: Po-Min Tu , Tzu-Chien Hung , Chia-Hui Shen , Chien-Shiang Huang , Chien-Chung Peng
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
- Current Assignee Address: TW Hsinchu Hsien
- Agency: ScienBiziP, P.C.
- Priority: CN201711047753 20171031
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/00 ; H01L33/44

Abstract:
A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.
Information query
IPC分类: