Invention Grant
- Patent Title: Light emitting diode
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Application No.: US15492164Application Date: 2017-04-20
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Publication No.: US10177280B2Publication Date: 2019-01-08
- Inventor: Chien-Chung Peng , Chien-Shiang Huang , Chia-Hui Shen , Tzu-Chien Hung
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY, INC
- Current Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY, INC
- Current Assignee Address: TW Hsinchu Hsien
- Agency: ScienBiziP, P.C.
- Priority: CN201610623516 20160803
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/38 ; H01L33/50 ; H01L33/54 ; H01L33/56

Abstract:
A light emitting diode include a light emitting chip, a first reflecting layer surrounding the light emitting diode chip, a first encapsulation layer and a second encapsulation layer covering on the light emitting diode chip. The light emitting chip has a light exiting surface, a first electrode and a second electrode. the first electrode and the second electrode are located opposite to the light exiting surface. Further, a second reflecting layer surrounds the periphery of the light emitting chip and also locates between the first encapsulation layer and the second encapsulation layer. A reflectivity of the first reflecting layer is greater than a reflectivity of the first reflecting layer. A bottom surface of the first electrode and the second electrode are exposed from the first reflecting layer.
Public/Granted literature
- US20180040785A1 LIGHT EMITTING DIODE Public/Granted day:2018-02-08
Information query
IPC分类: