A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.