Invention Grant
- Patent Title: Static discharge system
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Application No.: US15592930Application Date: 2017-05-11
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Publication No.: US10170438B2Publication Date: 2019-01-01
- Inventor: Alexey Kudymov , Jamal Ramdani
- Applicant: Power Integrations, Inc.
- Applicant Address: US CA San Jose
- Assignee: POWER INTEGRATIONS. INC.
- Current Assignee: POWER INTEGRATIONS. INC.
- Current Assignee Address: US CA San Jose
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L23/60 ; H03K17/081 ; H01L29/40 ; H01L29/778 ; H01L29/20 ; H01L27/06 ; H01L27/02 ; H01L29/205 ; H01L29/66 ; H01L21/8252

Abstract:
A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential. The charge distribution structure is capacitively coupled to a first terminal of the semiconductor device. The static discharge system removes charge that accumulates on at least a subset of the conductors. The static discharge system removes the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state.
Public/Granted literature
- US20170250144A1 Static Discharge System Public/Granted day:2017-08-31
Information query
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