Invention Grant
- Patent Title: Resonance structure of bulk acoustic wave resonator
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Application No.: US15228298Application Date: 2016-08-04
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Publication No.: US10097156B2Publication Date: 2018-10-09
- Inventor: Chia-Ta Chang , Re Ching Lin , Yung-Chung Chin , Chih-Feng Chiang
- Applicant: WIN Semiconductors Corp.
- Applicant Address: TW Tao Yuan
- Assignee: WIN SEMICONDUCTORS CORP.
- Current Assignee: WIN SEMICONDUCTORS CORP.
- Current Assignee Address: TW Tao Yuan
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW105111255A 20160411
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H03H9/17 ; H03H9/02

Abstract:
A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.
Public/Granted literature
- US20170294893A1 Resonance Structure of Bulk Acoustic Wave Resonator Public/Granted day:2017-10-12
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