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    Magnetically levitated and rotated chuck for processing microelectronic substrates in a process chamber
    1.
    发明授权
    Magnetically levitated and rotated chuck for processing microelectronic substrates in a process chamber 有权

    公开(公告)号：US10910253B2

    公开(公告)日：2021-02-02

    申请号：US15806760

    申请日：2017-11-08

    Applicant: TEL FSI, INC.

    Inventor： William P. Inhofer ,  Sean Moore ,  Lance Van Elsen

    IPC: H01L21/687 ,  B08B5/02 ,  B08B3/02 ,  B08B3/10 ,  H01L21/67 ,  H02N15/00 ,  C23C16/46 ,  H01L21/677

    Abstract: Cleaning systems and methods for semiconductor fabrication use rotatable and optionally translatable chuck assemblies that incorporate magnetic levitation and rotation functionality to cause chuck rotation. The rotating chuck components do not physically contact other chuck components when levitated and rotating. This eliminates corresponding components whose friction or lubricants might generate contamination. The low friction chuck functionality of the present invention is useful in any fabrication tool in which a workpiece is supported on a rotating support during a treatment. The chuck is particularly useful in cryogenic cleaning treatments. By avoiding the use of lubricants for this rotating interface, process chambers can be evacuated and/or vented up to higher pressures much faster. This significantly reduces cycle time for cryogenic treatments.

    Wafer edge lift pin design for manufacturing a semiconductor device
    2.
    发明授权
    Wafer edge lift pin design for manufacturing a semiconductor device 有权

    公开(公告)号：US10418270B2

    公开(公告)日：2019-09-17

    申请号：US15835184

    申请日：2017-12-07

    Applicant: TEL FSI, Inc.

    Inventor： Edward D. Hanzlik ,  Sean Moore ,  Brian D. Hansen

    IPC: H01L21/687

    Abstract: A wafer edge lift pin of an apparatus for manufacturing a semiconductor device is described. The wafer edge lift pin includes an offset top section containing a notch portion to support and laterally confine the wafer. The notch portion horizontally sweeps away from the wafer along a radius so that rotation adjusts lateral confinement of the wafer. A base section below the top section has a diameter greater than a diameter of the top section across the notch portion to help strengthen the pin and to allow perpendicular mounting. A bottom section has a diameter that is smaller than the diameter of the base section and provides a boss feature to mount the lift pin. The apparatus includes a process chamber where the wafer is processed, a chuck assembly on which the wafer is loaded. At least three wafer edge lift pins move the wafer up and down.

    Method of substrate temperature control during high temperature wet processing
    4.
    发明授权
    Method of substrate temperature control during high temperature wet processing 有权
    高温湿法加工过程中基体温度控制方法

    公开(公告)号：US09490138B2

    公开(公告)日：2016-11-08

    申请号：US14565542

    申请日：2014-12-10

    Applicant: TEL FSI, Inc.

    Inventor： Kevin L. Siefering

    IPC: H01L21/311 ,  H01L21/67

    CPC classification number: H01L21/31111 ,  H01L21/6708 ,  H01L21/67109

    Abstract: Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.

    Abstract translation: 提供了用于在单个衬底工具中处理衬底的方法。 在一个实施例中，该方法包括在单个衬底工具中提供衬底，将第一温度大于100℃的第一处理流体施加到衬底的下表面，以将衬底加热至大约第一温度， 在大于100℃的第二温度下的第二处理流体到所述基底的上表面。

    Process for selectively removing nitride from substrates
    5.
    发明授权
    Process for selectively removing nitride from substrates 有权
    从衬底中选择性去除氮化物的工艺

    公开(公告)号：US09059104B2

    公开(公告)日：2015-06-16

    申请号：US13312148

    申请日：2011-12-06

    Applicant: Anthony S. Ratkovich ,  Jeffery W. Butterbaugh ,  David Scott Becker

    Inventor： Anthony S. Ratkovich ,  Jeffery W. Butterbaugh ,  David Scott Becker

    IPC: B44C1/22 ,  H01L21/311 ,  H01L21/67

    CPC classification number: H01L21/31111 ,  H01L21/67051 ,  H01L21/6708

    Abstract: A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

    Abstract translation: 从衬底选择性地去除氮化硅的方法包括在其表面上提供具有氮化硅的衬底; 并在高于约150℃的温度下将磷酸和硫酸作为混合酸液体流分配到基材表面上。在该方法中，将水加入混合酸液体液体的液体溶液中 混合酸液体液体的液体溶液通过喷嘴。

    Process for increasing the hydrophilicity of silicon surfaces following HF treatment
    6.
    发明授权
    Process for increasing the hydrophilicity of silicon surfaces following HF treatment 有权
    HF处理后提高硅表面亲水性的方法

    公开(公告)号：US09017568B2

    公开(公告)日：2015-04-28

    申请号：US14159560

    申请日：2014-01-21

    Applicant: TEL FSI, Inc.

    Inventor： Steven L. Nelson

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00 ,  H01L21/306 ,  H01L31/18

    CPC classification number: H01L21/306 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/31111 ,  H01L31/18

    Abstract: A method for performing an oxide removal process is described. The method includes providing a substrate having an oxide layer, and preparing a patterned mask layer on the oxide layer, wherein the patterned mask layer has a pattern exposing at least a portion of the oxide layer. An HF treatment of the substrate is performed to transfer the pattern at least partially through the oxide layer, wherein the HF treatment exposes a silicon surface. Following the performing of the HF treatment, a surface property of the silicon surface is modified, wherein the modifying includes administering at least one oxidizing agent to contact the silicon surface to cause chemical oxidation of the silicon surface. And, following the modifying of the surface property, at least a portion of the patterned mask layer or a residual portion of the patterned mask layer is removed.

    Abstract translation: 描述了一种执行氧化物去除处理的方法。 该方法包括提供具有氧化物层的衬底，以及在氧化物层上制备图案化掩模层，其中图案化掩模层具有暴露氧化物层的至少一部分的图案。 执行衬底的HF处理以至少部分地转移图案通过氧化物层，其中HF处理暴露硅表面。 在执行HF处理之后，改变硅表面的表面性质，其中改性包括施用至少一种氧化剂以接触硅表面以引起硅表面的化学氧化。 并且，在修饰表面性质之后，图案化掩模层的至少一部分或图案化掩模层的残余部分被去除。

    Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation
    8.
    发明授权
    Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation 有权
    使用易于在打开和关闭操作模式之间转换的处理室设计来处理微电子工件的工具和方法

    公开(公告)号：US08684015B2

    公开(公告)日：2014-04-01

    申请号：US13548489

    申请日：2012-07-13

    Applicant: Jeffrey M. Lauerhaas ,  Jimmy D. Collins ,  Tracy A. Gast ,  Alan D. Rose

    Inventor： Jeffrey M. Lauerhaas ,  Jimmy D. Collins ,  Tracy A. Gast ,  Alan D. Rose

    IPC: B08B15/00 ,  B08B15/02 ,  B08B11/00

    CPC classification number: H01L21/67017 ,  Y10S134/902 ,  Y10T137/0363 ,  Y10T137/2599

    Abstract: Strategies for tool designs and their uses wherein the tools can operate in either closed or open modes of operation. The tools easily transition between open and closed modes on demand. According to one general strategy, environmentally controlled pathway(s) couple the ambient to one or more process chambers. Air amplification capabilities upstream from the process chamber(s) allow substantial flows of air to be introduced into the process chamber(s) on demand. Alternatively, the fluid pathways are easily closed, such as by simple valve actuation, to block egress to the ambient through these pathways. Alternative flows of nonambient fluids can then be introduced into the process chamber(s) via pathways that are at least partially in common with the pathways used for ambient air introduction. In other strategies, gap(s) between moveable components are sealed at least with flowing gas curtains rather than by relying only upon direct physical contact for sealing.

    Abstract translation: 工具设计及其用途的策略，其中工具可以以闭合或开放的操作模式运行。 这些工具可以根据需要轻松地在开放和关闭模式之间转换。 根据一个总体策略，环境控制的路径将环境耦合到一个或多个处理室。 来自处理室上游的空气放大能力允许根据需要将大量的空气流引入处理室。 或者，流体路径容易关闭，例如通过简单的阀门致动，以阻止通过这些路径流出到环境中。 然后通过至少部分地与用于环境空气引入的路径共同的路径将非流体的替代流引入加工室。 在其他策略中，可移动部件之间的间隙至少与流动的气帘密封，而不是仅依靠直接的物理接触进行密封。

    Apparatus for removing material from one or more substrates
    9.
    发明授权
    Apparatus for removing material from one or more substrates 有权
    用于从一个或多个基底去除材料的装置

    公开(公告)号：US08394228B2

    公开(公告)日：2013-03-12

    申请号：US12555481

    申请日：2009-09-08

    Applicant: Kurt Karl Christenson ,  Ronald J. Hanestad ,  Patricia Ann Ruether ,  Thomas J. Wagener

    Inventor： Kurt Karl Christenson ,  Ronald J. Hanestad ,  Patricia Ann Ruether ,  Thomas J. Wagener

    IPC: B44C1/22 ,  C23F1/08

    CPC classification number: B05B1/00 ,  B08B3/08 ,  B08B7/00 ,  B08B2230/01 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/30604 ,  H01L21/31105 ,  H01L21/31133 ,  H01L21/6708

    Abstract: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.

    Abstract translation: 从衬底去除材料，优选光致抗蚀剂的方法包括将包含硫酸和/或其干燥物质和前体并且具有不大于5:1的水/硫酸摩尔比的液体硫酸组合物分配到材料 涂覆的基材的量可以有效地基本上均匀地涂覆涂覆有材料的基材。 优选在分配液体硫酸组合物之前，期间或之后将基材加热至至少约90℃的温度。 在基板处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可以有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前 暴露于水蒸汽。 然后优选冲洗基材以除去材料。

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