公开(公告)号：USD693779S1

公开(公告)日：2013-11-19

申请号：US29419105

申请日：2012-04-25

Applicant: Chen-Fu Chu ,  Chao-Chen Cheng

Designer： Chen-Fu Chu ,  Chao-Chen Cheng

公开(公告)号：USD690670S1

公开(公告)日：2013-10-01

申请号：US29419115

申请日：2012-04-25

Applicant: Chen-Fu Chu ,  Chao-Chen Cheng ,  Li-Wei Shan

Designer： Chen-Fu Chu ,  Chao-Chen Cheng ,  Li-Wei Shan

公开(公告)号：USD689834S1

公开(公告)日：2013-09-17

申请号：US29419110

申请日：2012-04-25

Applicant: Chen-Fu Chu ,  Chao-Chen Cheng ,  Li-Wei Shan

Designer： Chen-Fu Chu ,  Chao-Chen Cheng ,  Li-Wei Shan

公开(公告)号：USD684941S1

公开(公告)日：2013-06-25

申请号：US29419117

申请日：2012-04-25

Applicant: Chen-Fu Chu ,  Hao-Chun Cheng

Designer： Chen-Fu Chu ,  Hao-Chun Cheng

公开(公告)号：US20120074384A1

公开(公告)日：2012-03-29

申请号：US13310552

申请日：2011-12-02

Applicant: FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

Inventor： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

IPC: H01L33/06

CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US20110114966A1

公开(公告)日：2011-05-19

申请号：US12939142

申请日：2010-11-03

Applicant: Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

Inventor： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

IPC: H01L33/32 ,  H01L33/60

CPC classification number: H01L33/60 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405

Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Abstract translation: 具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极 其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。 本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。 金属电极位于器件的边缘和发光侧。 金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

公开(公告)号：US20110108851A1

公开(公告)日：2011-05-12

申请号：US12939984

申请日：2010-11-04

Applicant: Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

Inventor： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

IPC: H01L33/32 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.

Abstract translation: 本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层 以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

公开(公告)号：US07563625B2

公开(公告)日：2009-07-21

申请号：US11618468

申请日：2006-12-29

Applicant: Chuong Anh Tran ,  Trung Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

Inventor： Chuong Anh Tran ,  Trung Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer, etching the surface of the LED wafer such that etched pits are formed in the surface, removing the mask, and roughening or texturing the surface of the LED wafer including the etched pits. In this manner, the surface area of the LED device may be increased when compared to a conventional LED device, and less emitted light may experience total internal reflection (TIR) according to Snell's law, thereby leading to increased light extraction.

Abstract translation: 提供了用于制造具有增加的光提取的半导体发光二极管（LED）装置的方法。 该方法通常包括将掩模施加到LED晶片的表面，蚀刻LED晶片的表面，使得在表面形成蚀刻的凹坑，去除掩模，以及使包含蚀刻凹坑的LED晶片的表面变粗糙或纹理化 。 以这种方式，与传统的LED器件相比，LED器件的表面积可以增加，并且较少的发射光可以根据斯涅耳定律经历全内反射（TIR），从而导致增加的光提取。

公开(公告)号：US20080032488A1

公开(公告)日：2008-02-07

申请号：US11835289

申请日：2007-08-07

Applicant: JIUNN-YI CHU ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

Inventor： JIUNN-YI CHU ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。 除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。 停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。 可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割加热后的重金属硬度应足够强大。 可以将胶带加入到晶片中，并且可以使用断路器将模具分开。 可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

公开(公告)号：US08802469B2

公开(公告)日：2014-08-12

申请号：US13109687

申请日：2011-05-17

Applicant: Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

Inventor： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

IPC: H01L21/301

CPC classification number: H01L33/0079 ,  H01L33/0095

Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。