Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US15813939Application Date: 2017-11-15
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Publication No.: US09991882B2Publication Date: 2018-06-05
- Inventor: Hajime Ohmi , Osamu Uno , Masahiro Iwamoto , Yuichi Itonaga
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2014-144226 20140714
- Main IPC: H03K17/081
- IPC: H03K17/081 ; H03K9/04 ; H03K19/0185 ; H03K19/003

Abstract:
A semiconductor apparatus includes an internal circuit connected to a first power line to which a first power voltage is applied; a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied; and a voltage control circuit, which is connected to the node, generating the control voltage. Further, the voltage control circuit includes a step-down circuit generating an internal voltage by lowering the input voltage applied to the node, and a switching circuit, which is connected to the first power line, generating the control voltage based on the first power voltage and the internal voltage.
Public/Granted literature
- US20180076809A1 SEMICONDUCTOR APPARATUS Public/Granted day:2018-03-15
Information query
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