- Patent Title: Method for treating a gallium nitride layer comprising dislocations
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Application No.: US15363616Application Date: 2016-11-29
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Publication No.: US09991341B2Publication Date: 2018-06-05
- Inventor: Arnaud Yvon
- Applicant: STMICROELECTRONICS (TOURS) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Seed IP Law Group LLP
- Priority: FR1358324 20130830
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L21/306 ; H01L21/322 ; H01L29/20 ; H01L29/66 ; H01L29/36 ; H01L29/872
Abstract:
A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.
Public/Granted literature
- US20170077225A1 METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS Public/Granted day:2017-03-16
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