Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
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Application No.: US15262117Application Date: 2016-09-12
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Publication No.: US09991314B2Publication Date: 2018-06-05
- Inventor: Naoki Hase , Tadaomi Daibou , Yushi Kato , Shumpei Omine , Junichi Ito
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-191669 20140919
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L27/105 ; H01L29/82 ; G11C11/16 ; H01L43/12 ; H01F10/12 ; H01F10/32
Abstract:
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0
Public/Granted literature
- US20160380029A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2016-12-29
Information query
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