Invention Grant
- Patent Title: Imaging device and manufacturing method thereof
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Application No.: US15200803Application Date: 2016-07-01
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Publication No.: US09991297B2Publication Date: 2018-06-05
- Inventor: Koji Iizuka , Takahiro Tomimatsu
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-157098 20150807
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146 ; H01L21/00

Abstract:
An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.
Public/Granted literature
- US20170040360A1 IMAGING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-02-09
Information query
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