Invention Grant
- Patent Title: Method of fabricating integrated circuit device by using slurry composition
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Application No.: US15286976Application Date: 2016-10-06
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Publication No.: US09991127B2Publication Date: 2018-06-05
- Inventor: Sang-hyun Park , Jae-hak Lee , Bo-hyeok Choi , Sang-kyun Kim , Won-ki Hur
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,K.C. TECH CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,K.C. TECH CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2016-0005332 20160115
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C09G1/02 ; H01L21/02 ; H01L21/308
Abstract:
A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.
Public/Granted literature
- US20170207100A1 METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICE BY USING SLURRY COMPOSITION Public/Granted day:2017-07-20
Information query
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