Invention Grant
- Patent Title: Chemically amplified resist material and resist pattern-forming method
-
Application No.: US15347113Application Date: 2016-11-09
-
Publication No.: US09989849B2Publication Date: 2018-06-05
- Inventor: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-219979 20151109; JP2016-217577 20161107
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/16 ; G03F7/025 ; G03F7/20 ; G03F7/32 ; G03F7/38 ; H01L21/027 ; G03F7/039 ; C08F220/22 ; C07D409/14 ; C07C381/12 ; C08F220/14 ; C07C303/32 ; C08F220/28 ; C07C309/07 ; C08F220/38

Abstract:
A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid generating agent included in the generative component comprises a compound represented by the formula (B). RB3 and RB4 each independently represent a monovalent organic group, or taken together represent a cyclic structure together with the O—C—O. At least one of RB3 and RB4 comprises a halogen atom, a nitro group, a cyano group, a formyl group, a carbonyl group, a carboxy group, a sulfo group, a sulfonyl group or a combination thereof, or the cyclic structure having 4 to 30 ring atoms is a spiro cyclic structure, a fused cyclic structure or a bridged cyclic structure.
Public/Granted literature
- US20170131634A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD Public/Granted day:2017-05-11
Information query
IPC分类: