Invention Grant
- Patent Title: Low light failure, high power led street lamp and method for manufacturing the same
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Application No.: US14998285Application Date: 2015-12-24
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Publication No.: US09989238B2Publication Date: 2018-06-05
- Inventor: Zhiming Chen , Wei Gu
- Applicant: Zhiming Chen , Wei Gu , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO., LTD.
- Applicant Address: CN Guizhou CN Jiangsu CN Jiangsu
- Assignee: Zhiming Chen,Wei Gu,SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO., LTD.
- Current Assignee: Zhiming Chen,Wei Gu,SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Guizhou CN Jiangsu CN Jiangsu
- Agency: J.C. Patents
- Priority: CN201310257295 20130625
- Main IPC: F21V29/76
- IPC: F21V29/76 ; F21V29/71 ; F21S8/08 ; F21V29/51 ; F21V29/54 ; H01L35/32 ; H01L35/34 ; F21W131/103 ; F21Y115/10

Abstract:
A low light failure high power LED street lamp and a manufacturing method therefor. Color mark is made on tail end of N-type semiconductor element (6) or P-type semiconductor element (7); then N-type and P-type semiconductor element (6, 7) are arranged in matrix manner between upper beryllium-oxide ceramic wafer (8) and lower beryllium-oxide ceramic wafer (9), so that head end of N-type semiconductor element (6) is connected with tail end of P-type semiconductor element (7) or tail end of N-type semiconductor element (6) is connected with head end of P-type semiconductor element (7), then lower beryllium-oxide ceramic wafer (9) is attached, through graphene thermal conductive greaseon layer (4), on backside of circuit board (2) which is mounted with LED bulbs (3), and heat sink (15) is mounted on upper beryllium-oxide ceramic wafer (8), then circuit board (2) together with heat sink (15) are mounted into street lamp housing (1).
Public/Granted literature
- US20160131357A1 Low light failure, high power led street lamp and method for manufacturing the same Public/Granted day:2016-05-12
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