Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15212126Application Date: 2016-07-15
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Publication No.: US09966945B2Publication Date: 2018-05-08
- Inventor: Shinji Ujita , Hiroshi Inada , Tatsuo Morita
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: PANASONIC CORPORATION
- Current Assignee: PANASONIC CORPORATION
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-033058 20140224
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H03K17/687 ; H01L29/778 ; H01L27/095 ; H01L27/098 ; H01L29/20 ; H01L27/088 ; H01L23/482 ; H01L23/00 ; H03K17/0412 ; H03K17/16 ; H01L27/06 ; H02M3/158 ; H01L23/522 ; H01L29/417 ; H01L29/10
Abstract:
A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip.
Public/Granted literature
- US20160329890A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-11-10
Information query
