Invention Grant
- Patent Title: Semiconductor device having a field effect transistor formed on a silicon-on-insulator substrate and manufacturing method thereof
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Application No.: US14864781Application Date: 2015-09-24
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Publication No.: US09966452B2Publication Date: 2018-05-08
- Inventor: Hidekazu Oda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-193986 20140924
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/088 ; H01L29/66 ; H01L29/36 ; H01L29/16 ; H01L29/06 ; H01L21/324 ; H01L21/265 ; H01L29/167 ; H01L29/78 ; H01L21/762 ; H01L27/12 ; H01L21/84
Abstract:
A semiconductor device includes an SOI substrate and a MISFET formed on the SOI substrate. The SOI substrate has a base substrate, a ground plane region formed on the base substrate, a BOX layer formed on the ground plane region and an SOI layer formed on the BOX layer. The base substrate is made of silicon and the ground plane region includes a semiconductor region made of silicon carbide.
Public/Granted literature
- US20160087069A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-03-24
Information query
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