Invention Grant
- Patent Title: Augmented capacitor structure for high quality (Q)-factor radio frequency (RF) applications
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Application No.: US14853967Application Date: 2015-09-14
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Publication No.: US09966426B2Publication Date: 2018-05-08
- Inventor: Niranjan Sunil Mudakatte , Daeik Daniel Kim , David Francis Berdy , Changhan Hobie Yun , Je-Hsiung Jeffrey Lan , Chengjie Zuo , Mario Francisco Velez , Robert Paul Mikulka , Jonghae Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L23/057
- IPC: H01L23/057 ; H01L23/48 ; H01L23/495 ; H01L49/02 ; H01L23/522 ; H01L27/08 ; H01L23/00

Abstract:
An augmented capacitor structure includes a substrate and a first capacitor plate of a first conductive layer on the substrate. The augmented capacitor structure also includes an insulator layer on a surface of the first capacitor plate facing away from the substrate and a second capacitor plate. The second capacitor plate includes a second conductive layer on the insulator layer, supported by the first capacitor plate as a first capacitor. A second capacitor electrically is coupled in series with the first capacitor. The first capacitor plate is shared by the first capacitor and the second capacitor as a shared first capacitor plate. An extended first capacitor plate includes a first dummy portion of a third conductive layer and a first dummy via bar extending along the surface of the shared first capacitor plate. The first dummy portion extends along and is supported by the first dummy via bar.
Public/Granted literature
- US20170077214A1 AUGMENTED CAPACITOR STRUCTURE FOR HIGH QUALITY (Q)-FACTOR RADIO FREQUENCY (RF) APPLICATIONS Public/Granted day:2017-03-16
Information query
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