Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US14950424Application Date: 2015-11-24
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Publication No.: US09966383B2Publication Date: 2018-05-08
- Inventor: Liang Yi , Ko-Chi Chen , Shen-De Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Priority: TW104133857A 20151015
- Main IPC: H01L27/11578
- IPC: H01L27/11578 ; H01L29/423
Abstract:
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, a non-volatile memory cell, and a gate stack. The non-volatile memory cell is formed in the semiconductor substrate, and a top surface of the non-volatile memory cell is coplanar with or below a top surface of the semiconductor substrate. The gate stack is formed on the semiconductor substrate.
Public/Granted literature
- US20170110469A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-04-20
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