A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, forming a liner layer on the second dielectric layer and in the first and second contact holes, and forming a copper contact in the first and second contact holes.