A method of forming a semiconductor structure is disclosed. The method includes forming a semiconductor wafer having a device layer situated over a handle substrate, the device layer having at least one semiconductor device, forming a front side glass on a front side of the semiconductor wafer, and partially removing the handle substrate from a back side of the semiconductor wafer. The method also includes removing a portion of the semiconductor wafer from an outer perimeter thereof, either by sawing an edge trim trench through the handle substrate, the device layer and into the front side glass to form a ring, and removing the ring on the outer perimeter of the semiconductor wafer, or by edge grinding the outer perimeter of the semiconductor wafer. The method further includes completely removing the handle substrate.