Invention Grant
- Patent Title: Process gas generation for cleaning of substrates
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Application No.: US13783382Application Date: 2013-03-03
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Publication No.: US09966280B2Publication Date: 2018-05-08
- Inventor: Ian J Brown
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; H01L21/66 ; B08B7/00

Abstract:
Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system and a wet clean system. One or more objectives for the pre-treatment system are selected and two or more pre-treatment operating variables including UV dose, substrate temperature, oxygen partial pressure, oxygen and ozone partial pressure, and/or total pressure, are optimized to meet the pre-treatment objectives, using metrology measurements. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. A pre-treatment gas comprising oxygen and/or ozone is delivered onto a surface of the substrate and irradiated with a UV device, generating oxygen radicals. Cleaning of the substrate in the pre-treatment process is set at less than 100% in order to ensure the change in k-value of the substrate is within a set range for the substrate application.
Public/Granted literature
- US20140096792A1 PROCESS GAS GENERATION FOR CLEANING OF SUBSTRATES Public/Granted day:2014-04-10
Information query
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