Invention Grant
- Patent Title: Method of densifying films in semiconductor device
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Application No.: US15698570Application Date: 2017-09-07
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Publication No.: US09966255B2Publication Date: 2018-05-08
- Inventor: Bart J. van Schravendijk , Wei Tang
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; C23C16/56 ; C23C16/04 ; H01L21/3105 ; H01L21/768

Abstract:
Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a substrate comprising a material to be densified, and annealing the substrate to transfer stress from the removable film to the material and thereby densify the material. Some methods involve depositing a tensile capping layer on the material to be densified on a substrate and annealing the substrate at a temperature greater than about 450° C. Some methods include clamping the substrate including the material to be densified to a shaped pedestal using an electrostatic chuck to apply compressive stress to the material to be densified.
Public/Granted literature
- US20170372895A1 METHOD OF DENSIFYING FILMS IN SEMICONDUCTOR DEVICE Public/Granted day:2017-12-28
Information query
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