Invention Grant
- Patent Title: High throughput vacuum deposition sources and system
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Application No.: US14672812Application Date: 2015-03-30
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Publication No.: US09966242B2Publication Date: 2018-05-08
- Inventor: Xinsheng Guo
- Applicant: Xinsheng Guo
- Applicant Address: US CA Palo Alto
- Assignee: Xinsheng Guo
- Current Assignee: Xinsheng Guo
- Current Assignee Address: US CA Palo Alto
- Agency: SV Patent Service
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/50 ; C23C14/56 ; C23C16/458 ; C23C16/54 ; H01J37/32

Abstract:
A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.
Public/Granted literature
- US20160093478A1 High Throughput Vacuum Deposition Sources and System Public/Granted day:2016-03-31
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